BAV70

S MD Type High-Speed Double Diode KAV70(BAV70) SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Diodes Unit: mm Features +0.1 2.4-0.1 Small plastic SMD package High switching speed: max.4 ns Repetitive peak forward current: max. 450 mA +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Repetitive peak reverse voltage Continuous reverse voltage Continuous forward current (single diode loaded *) (double diode loaded *) Repetitive peak forward current Non-repetitive peak forward current (Tj = 25 ) t=1us t = 1ms t = 1s power dissipation (Tamb = 25 )* PD Rth j-tp Rth j-a Tst g Tj IFSM IFRM Symbol VRRM VR IF Rating 85 75 215 125 450 4 1 0.5 250 360 500 -65 to +150 150 mW K/W K/W A mA Unit V V mA thermal resistance from junction to tie-point thermal resistance from junction to ambient * Storage temperature Junction temperature * Device mounted on an FR4 printed-circuit board. Electrical Characteristics Ta = 25 Parameter Symbol IF = 1 mA Forward voltage VF IF = 10 mA IF = 50 mA IF = 150 mA VR = 25 V Reverse current IR VR = 75 V VR = 25 V; Tj = 150 VR = 75 V; Tj = 150 Diode capacitance Reverse recovery time forward recovery voltage Cd trr Vf r f = 1 MHz; VR = 0 V; when switched from IF =10 mA to IR = 10 mA; RL = 100 Conditions Max 715 855 1 1.25 30 2.5 60 100 1.5 4 1.75 nA A A A pF ns V Unit mV mV V ; measured at IR = 1 mA; when switched from IF =10 mA; tr = 20 ns; Marking Marking A4 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type KAV70(BAV70) Typical Characteristics Diodes Device mounted on an FR4 printed-circuit board. (1) Tj = 150 (2) Tj = 25 (3) Tj = 25 ; typical values. ; typical values. ; maximum values. Fig.1Maximum permissible continuous forward current as a function of ambient temperature. Fig.2 Forward current as a function of forward voltage. Based on square wave currents. Tj = 25 prior to surge. Fig.3 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 2 www.kexin.com.cn SMD Type KAV70(BAV70) Diodes f = 1 MHz; Tj = 25 Fig.4 Reverse current as a function of junction temperature. Fig.5 Diode capacitance as a function of reverse voltage; typical values. www.kexin.com.cn 1