BAV74

S MD Type High-speed double diode BAV74 Diodes SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 Small plastic SMD package High switching speed: max.4 ns Continuous reverse voltage: max. 50 V Repetitive peak reverse voltage: max. 60 V Repetitive peak forward current: max. 450 mA +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Repetitive peak reverse voltage Continuous reverse voltage Continuous forward current Repetitive peak forward current Symbol VRRM VR IF IFRM square wave;Tj = 25 Non-repetitive peak forward current IFSM t=1 s prior to surge; 4 1 0.5 250 -65 +150 150 360 500 K/W K/W mW A single diode loaded; Note 1 double diode loaded; Note 1 Conditions Min Max 60 50 215 125 450 mA Unit V V mA t = 1 ms t=1s Total power dissipation Storage temperature Junction temperature thermal resistance from junction to tie-point thermal resistance from junction to ambient Note 1. Device mounted on an FR4 printed-circuit board. Ptot Tstg Tj Rth j-tp Rth j-a Tamb = 25 ; Note 1 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 S MD Type BAV74 Diodes Electrical Characteristics Ta = 25 Param eter Sym bol Conditions IF = 1 m A Forward voltage VF I F = 10 m A I F = 100 m A V R = 25 V Reverse current IR V R = 50 V V R = 25 V; T j = 150 V R = 50 V; T j = 150 Diode capacitance Reverse recovery tim e Cd t rr f = 1 MHz; V R = 1 V; when switched from I F =10m A to I R = 10 m A; R L = 100 Reverse recovery tim e V fr Max 715 855 1.0 30 0.1 30 100 1.5 4 Unit mV mV V nA A A A pF ns ; m easured at I R = 1 m A; 1.75 V when switched from I F =10 m A; t r = 2 0 ns; Marking Marking JAp 2 www.kexin.com.cn