BAV99

S MD Type High-Speed Double Diode KAV99(BAV99) SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Diodes Unit: mm +0.1 2.4-0.1 High switching sped: max.4 ns. Repetitive peak forward current: max.450 mA. +0.1 1.3-0.1 Small plastic SMD package. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Repetitive peak reverse voltage Continuous reverse voltage Continuous forward current(single diode loaded *) ---------------------------------(double diode loaded *) Repetitive peak forward current Non-repetitive peak forward current Tj=25 t=1 s t=1ms t=1s power dissipation * Thermal resistance from junction to tie-point Thermal resistance from junction to ambient * Junction Temperature Storage Temperature Range * Device mounted on an FR4 printed-circuit board. PD Rth j-tp Rth j-a Tj Tstg IFSM Symbol VRRM VR IF IFRM Rating 85 75 215 125 450 4 1 0.5 250 360 500 150 -65 to +150 mW K/W K/W A Unit V V mA mA Electrical Characteristics Ta = 25 Parameter Symbol IF =1 mA Forward voltage VF IF =10 mA IF =50 mA IF =150 mA VR =25 V Reverse current IR VR =75 V VR =25 V; Tj= 150 VR =75 V; Tj= 150 Diode capacitance Reverse recovery time Forward recovery voltage Cd trr Vfr VR =0 V, f= 1 MHz when switched from IF= 10 mA to IR=10mA;RL=100 ; measured at IR= 1mA IF = 10 mA, tr= 20 ns Testconditons Max 715 855 1 1.25 30 1 30 50 1.5 4 1.75 Unit mV mV V V nA A A A pF nS V Marking Marking A7 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 S MD Type KAV99(BAV99) Typical Characteristics Diodes Device mounted on an FR4 printed-circuit board. (1) Tj = 150 (2) Tj = 25 (3) Tj = 25 ; typical values. ; typical values. ; maximum values. Fig.1Maximum permissible continuous forward current as a function of ambient temperature. Fig.2 Forward current as a function of forward voltage. Based on square wave currents. Tj = 25 prior to surge. Fig.3 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 2 www.kexin.com.cn S MD Type KAV99(BAV99) Diodes f = 1 MHz; Tj = 25 Fig.4 Reverse current as a function of junction temperature. Fig.5 Diode capacitance as a function of reverse voltage; typical values. www.kexin.com.cn 3