BAW100

S MD Type Silicon Switching Diode Array BAW100 Diodes Unit: mm Features For high-speed switching Electrically insulated diodes A b s o lu t e M a x im u m R a t in g s T a = 2 5 P a ra m e te r R e v e r s e v o lt a g e P e a k r e v e r s e v o lt a g e F o rw a rd c u rre n t S u rg e fo rw a rd c u rre n t, t = 1 s S ym bol VR VRM IF IF S P to t Tj T s tg R th R th JA JS V a lu e 75 85 200 4 .5 330 150 -6 5 to + 1 5 0 500 360 2 U n it V V mA A mW T o t a l p o w e r d is s ip a t io n , T S = 3 1 J u n c t io n t e m p e r a t u r e S to ra g e te m p e ra tu re ra n g e J u n c t io n - a m b ie n t 1 ) J u n c t io n - s o ld e r in g p o in t N o te 1 .P a c k a g e m o u n te d o n e p o x y p c b 4 0 m m 40 m m K /W K /W 1 .5 m m /6 c m Cu www.kexin.com.cn 1 S MD Type BAW100 Diodes Electrical Characteristics Ta = 25 Parameter Breakdown voltage Symbol VBR Conditions I(BR) = 100 A IF = 1 mA Forward voltage VF IF = 10 mA IF = 50 mA IF = 150 mA VR = 75 V Reverse current IR VR = 25 V, TA = 150 VR = 75 V, TA = 150 Diode capacitance Reverse recovery time Cd trr VR = 0 V, f = 1 MHz IF = 10 mA, IR = 10 mA, RL = 100 measured at IR = 1 mA Min 85 715 855 1000 1250 1 30 50 2 6 pF ns A mV Typ Max Unit V Marking Marking JSs 2 www.kexin.com.cn