BAW101S

S MD Type High Voltage Double Diode BAW101S Diodes SOT-363 +0.1 1.3-0.1 0.65 Unit: mm Features Small plastic SMD package High switching speed: max. 50 ns 0.1max +0.15 2.3-0.15 0.525 0.36 High continuous reverse voltage: 300 V Electrically insulated diodes. +0.1 0.3-0.1 +0.1 2.1-0.1 +0.05 0.1-0.02 Absolute Maximum Ratings Ta = 25 Parameter Per diode continuous reverse voltage VR series connection repetitive peak forward current VRRM series connection continuous forward current repetitive peak forward current non-repetitive peak forward current total power dissipation storage temperature junction temperature operating ambient temperature thermal resistance from junction to soldering point thermal resistance from junction to ambient IF IFRM IFSM Ptot Tstg Tj Tamb Rth j-s Rth j-a -65 square wave; Tj = 25 prior to surge;t = 1 s single diode loaded; double diode loaded; 300 600 300 600 250 140 625 4.5 350 -65 +150 150 +150 255 357 K/W K/W mA A mW mA V V Symbol Conditions Min Max Unit Ts = 25 +0.05 0.95-0.05 +0.1 1.25-0.1 www.kexin.com.cn 1 S MD Type BAW101S Diodes Electrical Characteristics Ta = 25 Parameter reverse breakdown voltage forward voltage reverse current Symbol VBR(R) VF IR Conditions IR = 100 A IF = 100 mA; note 1 VR = 25 V VR = 250 V; Tamb = 150 reverse recovery time diode capacitance Note 1. Pulse test: pulse width = 300 s; ä = 0.02. trr Cd when switched from IF = 30 mA to IR = 30 mA; RL = 100 ; measured at IR = 3 mA; VR = 0; f = 1 MHz; 2 pF Min 300 1.1 150 50 50 mV nA A ns Max Unit Marking Marking K2 2 www.kexin.com.cn