BAW56S

S MD Type High-Speed Double Diode Array BAW56S Diodes SOT-363 +0.1 1.3-0.1 0.65 Unit: mm Small plastic SMD package High switching speed: max. 4 ns Continuous reverse voltage:max. 75 V 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 +0.15 2.3-0.15 0.525 Features 0.36 Repetitive peak reverse voltage:max. 85 V Repetitive peak forward current:max. 450 mA. +0.05 0.1-0.02 Absolute Maximum Ratings Ta = 25 Parameter Per diode repetitive peak forward current continuous reverse voltage continuous forward current repetitive peak forward current VRRM VR IF IFRM square wave; Tj = 25 non-repetitive peak forward current IFSM t=1 s prior to surge; 4 1 0.5 350 -65 -65 +150 +150 255 K/W mW A single diode loaded; all diodes loaded; 85 75 250 100 450 V V mA mA mA Symbol Conditions Min Max Unit t = 1 ms t=1s total power dissipation storage temperature junction temperature thermal resistance from junction to ambient Note 1. One or more diodes loaded. Ptot Tstg Tj Rth j-a Ts = 60 ; note 1 +0.05 0.95-0.05 +0.1 1.25-0.1 www.kexin.com.cn 1 S MD Type BAW56S Diodes Electrical Characteristics Ta = 25 Parameter Symbol Conditions I F = 1 mA forward voltage VF I F = 10 mA I F = 50 mA I F = 150 mA V R = 25 V reverse current IR V R = 75 V V R = 25 V; T j = 150 V R = 75 V; T j = 150 diode capacitance reverse recovery time forward recovery voltage Cd t rr V fr V R = 0; f = 1 MHz; when switched from I F = 10 mA to I R = 10 mA; R L = 100 ; measured at I R = 1 mA; 1.75 V Max 715 855 1 1.25 30 1 30 50 2 4 nA A A A pF ns mV Unit when switched from I F = 10 mA; t r = 20 ns Marking Marking A1t 2 www.kexin.com.cn