BBS

S MD Type Silicon RF Switching Diode BAR81W Diodes SOT-343 Unit: mm Features Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss Absolute Maxim um Ratings Ta = 25 Param eter Diode reverse voltage Forward current Total power dissipation, T S = 103 Junction tem perature Operating tem perature range Storage tem perature range Junction - am bient 1) Sym bol VR IF P tot Tj T op T stg R th JA R th JS Value 30 100 100 150 -55 to + 125 -55 to + 150 200 120 Unit V mA mW K/W K/W Junction - soldering point Note 1.Package m ounted on alum ina 15m m 16.7m m 0.7m m Electrical Characteristics Ta = 25 Parameter Reverse current Forward voltage Diode capacitance Forward resistance Series inductance Symbol IR VF CT rf trr Test Condition VR = 20 V IF = 100 mA VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz IF = 5 mA, f = 100 MHz 0.93 0.6 0.57 0.7 0.15 nH Min Typ Max 20 1 Unit nA V pF Marking Marking BBs www.kexin.com.cn 1