BC807A

S MD Type PNP Silicon AF Transistors KC807A(BC807A) SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm +0.1 2.4-0.1 Features For general AF applications. High collector current. High current gain. Low collector-emitter saturation voltage. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Peak collector current Base current power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICM IB PD Tj Tstg Rating -50 -45 -5 -500 -1 -100 310 150 -65 to +150 Unit V V V mA A mA mW Electrical Characteristics Ta = 25 Parameter Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Collector cutoff current Emitter cutoff current KC807A-16 DC current gain * Collector saturation voltage * Base to emitter voltage * Collector-base capacitance Emitter-base capacitance Transition frequency * Pulsed: PW 350 ìs, duty cycle 2% KC807A-25 KC807A-40 VCE(sat) IC = -500 mA, IB = -50 mA VBE(sat) IC = -500 mA, IB = -50 mA CCb Ceb fT VCB = -10 V, f = 1 MHz VEB = -0.5 V, f = 1 MHz IC = -50 mA, VCE = -5 V, f = 100 MHz 10 60 200 hFE IC = -100 mA, VCE = -1 V Symbol VCBO VCEO VEBO ICBO IEBO IC = -10 Testconditons A, IE = 0 Min -50 -45 -5 -100 -50 -100 100 160 250 160 250 350 250 400 630 -0.7 -1.2 V V pF pF MHz Typ Max Unit V V V nA A nA IC = -10 mA, IB = 0 IE = -10 A, IC = 0 VCB = -25 V, IE = 0 VCB = -25 V, IE = 0 , TA = 150 VEB = -4 V, IC = 0 Marking NO. Marking KC807A-16 5A KC807A-25 5B KC807A-40 5C +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1