BC808A

S MD Type PNP Silicon AF Transistors KC808A(BC808A) SOT-23 Transistors Unit: mm For general AF applications. +0.1 2.4-0.1 High collector current. High current gain. Low collector-emitter saturation voltage. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features +0.1 2.9-0.1 +0.1 0.4-0.1 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Peak collector current Base current Total power dissipation Storage temperature Junction temperature Symbol VCBO VCEO VEBO IC ICM IB Ptot Tstg Tj Rating -30 -25 -5 -500 -1 -100 310 -65 to +150 150 Unit V V V mA A mA mW Electrical Characteristics Ta = 25 Parameter Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Collector cutoff current Emitter cutoff current KC808A-16 DC current gain * Collector saturation voltage * Base to emitter voltage * Collector-base capacitance Emitter-base capacitance Transition frequency * Pulsed: PW 350 ìs, duty cycle 2% KC808A-25 KC808A-40 VCE(sat) IC = -500 mA, IB = -50 mA VBE(sat) IC = -500 mA, IB = -50 mA CCb Ceb fT VCB = -10 V, f = 1 MHz VEB = -0.5 V, f = 1 MHz IC = -50 mA, VCE = -5 V, f = 100 MHz 10 60 200 hFE IC = -100 mA, VCE = -1 V Symbol VCBO VCEO VEBO ICBO IEBO Testconditons IC = -10 µA, IE = 0 IC = -10 mA, IB = 0 IE = -10 µA, IC = 0 VCB = -25 V, IE = 0 VCB = -25 V, IE = 0 , TA = 150 VEB = -4 V, IC = 0 100 160 250 160 250 350 Min -30 -25 -5 -100 -50 -100 250 400 630 -0.7 -1.2 V V pF pF MHz Typ Max Unit V V V nA A nA Marking NO. Marking KC808A-16 5E KC808A-25 5F KC808A-40 5G +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1