BC817

S MD Type NPN Silicon AF Transistors KC817(BC817) SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm +0.1 2.4-0.1 Features For general AF applications. High collector current. High current gain. Low collector-emitter saturation voltage. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PD Tj Tstg Rating 50 45 5 800 310 150 -65 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Collector cutoff current Emitter cutoff current DC current gain * Collector saturation voltage * Base emitter on voltage Output Capacitance Transition frequency * Pulsed: PW 350 ìs, duty cycle 2% Symbol VCBO VCEO VEBO ICES IEBO hFE IC = 300 mA, VCE = 1 V VCE(sat) IC = 500 mA, IB = 50 mA VBE(on) VCE=1V,IC=300mA Cob fT VCB=10V,f=1MHz IC = 10 mA, VCE = 5 V, f = 50 MHz 100 60 0.7 1.2 12 V V pF MHz IC = 10 Testconditons A,VBE = 0 Min 50 45 5 100 100 100 630 Typ Max Unit V V V nA nA IC = 10 mA, IB = 0 IE = 10 A, IC = 0 VCB = 25 V, VBE= 0 VEB = 4 V, IC = 0 IC = 100 mA, VCE = 1 V Marking NO. Marking hFE KC817-16 8FA 100 250 KC817-25 8FB 160 400 KC817-40 8FC 250 630 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1