BC817W

SMD S MD Type General Purpose Transistor BC817W Transistors IC Features High current. Low voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage (IC = 10 mA) Emitter-base voltage Collector current (DC) Peak collector current Peak base current Total power dissipation Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Ramb Rth j-a Rating 50 45 5 500 1 200 200 -65 to +150 150 -65 to +150 625 K/W Unit V V V mA A mA mW www.kexin.com.cn 1 SMD Type BC817W Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current BC817W DC current gain BC817-16W BC817-25W BC817-40W Collector-emitter saturation voltage Base-emitter voltage Collector capacitance Transition frequency * Pulse test: t 300ìs, D 2%. VCE(sat) VBE CC fT IC = 500 mA; IB = 50 mA IC = 500 mA; VCE = 1 V IE = ie = 0 A; VCB = 10 V;f = 1 MHz IC = 10 mA; VCE = 5 V;f = 100 MHz hFE IC = 100 mA; VCE = 1 V * Symbol ICBO ICBO IEBO Testconditons IE = 0 A; VCB = 20 V IE = 0 A; VCB = 20 V;Tj = 150 IC = 0 A; VEB = 5 V Transistors IC Min Typ Max 100 5 100 Unit nA ìA nA 100 100 160 250 600 250 400 600 700 1.2 3 mV V pF MHz 100 hFE Classification TYPE Marking BC817W 6D BC817-16W 6A BC817-25W 6B BC817-40W 6C 2 www.kexin.com.cn