BC848

SMD S MD Type NPN General Purpose Transistor BC846,BC847,BC848 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 Low voltage (max. 65 V). 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Low current (max. 100 mA). 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation * Junction temperature Storage temperature Operating ambient temperature Thermal resistance from junction to ambient * Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tj Tstg Ramb Rth j-a BC846 80 65 6 BC847 50 45 6 100 200 200 250 150 -65 to +150 -65 to +150 500 K/W BC848 30 30 5 Unit V V V mA mA mA mW * Transistor mounted on an FR4 printed-circuit board, standard footprint. +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type BC846,BC847,BC848 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current BC846 BC847 DC current gain BC846A,BC847A BC846B,BC847B,BC848B BC847C Collector-emitter saturation voltage VCE(sat) IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA; * Base-emitter saturation voltage VBE(sat) IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA; * Base-emitter voltage Collector capacitance Transition frequency Noise figure * Pulse test: tp 300µs, ä 0.02. VBE CC fT NF IC = 2 mA; VCE = 5 V IC = 10 mA; VCE = 5 V VCB = 10 V; IE = Ie = 0;f = 1 MHz VCE = 5 V; IC = 10 mA;f = 100 MHz IC = 200ìA; VCE = 5 V;RS = 2 kÙ; = 1 kHz;B = 200 Hz f hFE IC = 2 mA; VCE = 5 V Symbol ICBO ICBO IEBO Testconditons VCB = 30 V, IE = 0 VCB = 30 V, IE = 0 , Tj = 150 VEB = 5 V, IC = 0 Transistors IC Min Typ Max 15 5 100 Unit nA ìA nA 110 110 110 200 420 180 290 520 90 200 700 900 580 660 450 800 220 450 800 250 600 mV mV mV mV 700 770 2.5 mV mV pF MHz 2 10 dB 100 hFE Classification TYPE Marking TYPE Marking TYPE Marking BC846 1D BC847 1H BC848 1K BC846A 1A BC847A 1E BC846B 1B BC847B 1F BC847C 1G 2 www.kexin.com.cn