BC850C

SMD S MD Type NPN General Purpose Transistors BC849, BC850 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 Low voltage (max. 45 V). +0.1 1.3-0.1 Low current (max. 100 mA) 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter collector-base voltage Symbol VCBO Rating 30 50 collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation Tamb storage temperature junction temperature operating ambient temperature thermal resistance from junction to ambient * * Transistor mounted on an FR4 printed-circuit board. 25 * VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Rth(j-a) 30 45 5 100 200 200 250 -65 to 150 150 -65 to 150 500 K/W Unit V V V V V mA mA mA mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type BC849, BC850 Electrical Characteristics Ta = 25 Parameter collector cut-off current emitter cut-off current DC current gain BC849B; BC850B BC849C; BC850C DC current gain BC849B; BC850B BC849C; BC850C collector-emitter saturation voltage VCEsat IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA base-emitter saturation voltage VBEsat IC = 10 mA; IB = 0.5 mA; *1 IC = 100 mA; IB = 5 mA; *1 base-emitter voltage collector capacitance emitter capacitance transition frequency VBE Cc Ce fT IC = 2 mA; VCE = 5 V; *2 IC = 10 mA; VCE = 5 V;*2 IE = ie = 0; VCB = 10 V; f = 1 MHz IC = ic = 0; VEB = 500 mV; f = 1 MHz IC = 10 mA; VCE = 5 V; f = 100 MHz IC = 200 ìA; VCE = 5 V; RS = 2 kÙ,f = 10 Hz to 15.7 kHz IC = 200 ìA; VCE = 5 V; RS = 2 kÙ,f = 1 kHz; B = 200 Hz 100 2.5 11 580 hFE IC = 2 mA; VCE = 5 V; 200 420 Symbol ICBO IEBO Testconditons IE = 0; VCB = 30 V IE = 0; VCB = 30 V; Tj = 150 ° C IC = 0; VEB = 5 V IC = 10 ìA; VCE = 5 V; 240 450 290 520 90 200 700 900 660 Min Typ Transistors IC Max 15 5 100 Unit nA ìA nA 450 800 250 600 mV mV mV mV 700 770 mV mV pF pF MHz 4 4 dB dB noise figure F *1 VBEsat decreases by about 1.7 mV/K with increasing temperature. *2 VBE decreases by about 2 mV/K with increasing temperature. hFE Classification TYPE Marking BC849B 2B BC849C 2C BC850B 2F BC850C 2G 2 www.kexin.com.cn