SMD S MD Type
PNP General Purpose Transistor BC856,BC857,BC858
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
Features
+0.1 2.4-0.1
Low current (max. 100 mA). Low voltage (max. 65 V).
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation * Junction temperature Storage temperature Operating ambient temperature Thermal resistance from junction to ambient * Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tj Tstg Ramb Rth j-a BC856 -80 -65 BC857 -50 -45 -5 -100 -200 -200 250 150 -65 to +150 -65 to +150 500 K/W BC858 -30 -30 Unit V V V mA mA mA mW
* Transistor mounted on an FR4 printed-circuit board, standard footprint.
+0.1 0.38-0.1
0-0.1
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1
SMD Type
BC856,BC857,BC858
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Emitter cutoff current BC856 BC857 DC current gain BC856A,BC857A BC856B,BC857B,BC858B BC857C Collector-emitter saturation voltage VCE(sat) IC = -10 mA; IB = -0.5 mA IC = -100 mA; IB = -5 mA; * Base-emitter saturation voltage VBE(sat) IC = -10 mA; IB = -0.5 mA IC = -100 mA; IB = -5 mA; * Base-emitter voltage Collector capacitance Transition frequency Noise figure * Pulse test: tp 300µs, ä 0.02. VBE CC fT NF IC = -2 mA; VCE = -5 V IC = -10 mA; VCE = -5 V VCB = -10 V; IE = Ie = 0;f = 1 MHz VCE = -5 V; IC = -10 mA;f = 100 MHz IC = -200 µA; VCE = -5 V;RS = 2 kÙ; f = 1 kHz;B = 200 Hz hFE IC = -2 mA; VCE = -5 V Symbol ICBO ICBO IEBO Testconditons VCB = -30 V, IE = 0 VCB = -30 V, IE = 0 , Tj = 150 VEB = -5 V, IC = 0
Transistors IC
Min
Typ -1
Max -15 -4 -100
Unit nA ìA nA
125 125 125 220 420 -75 -250 -700 -850 -600 -650
475 800 250 475 800 -300 -650 mV mV mV mV -750 -820 4.5 mV mV pF MHz 2 10 dB
100
hFE Classification
TYPE Marking TYPE Marking TYPE Marking BC856 3D BC857 3H BC858B 3K BC856A 3A BC857A 3E BC856B 3B BC857B 3F BC857C 3G
2
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