BC857BW

SMD S MD Type PNP General Purpose Transistor BC856W,BC857W,BC858W Transistors IC Features Low current (max. 100 mA). Low voltage (max. 65 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation Junction temperature Storage temperature Operating ambient temperature Thermal resistance from junction to ambient Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tj Tstg Ramb Rth j-a BC856W -80 -65 BC857W -50 -45 -5 -100 -200 -200 200 150 -65 to +150 -65 to +150 625 K/W BC858W -30 -30 Unit V V V mA mA mA mW www.kexin.com.cn 1 SMD Type BC856W,BC857W,BC858W Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current BC856W BC857W,BC858W DC current gain BC856AW,BC857AW BC856BW,BC857BW BC857CW Collector-emitter saturation voltage VCE(sat) IC = -10 mA; IB = -0.5 mA IC = -100 mA; IB = -5 mA;* Base-emitter saturation voltage VBE(sat) IC = -10 mA; IB = -0.5 mA IC = -100 mA; IB = -5 mA;* Base-emitter voltage Collector capacitance Emitter capacitance Transition frequency Noise figure * Pulse test: tp 300ìs, ä 0.02. VBE CC Ce fT NF IC = -2 mA; VCE = -5 V IC = -10 mA; VCE = -5 V VCB = -10 V; IE = Ie = 0;f = 1 MHz VEB = -0.5 V; IC = Ic = 0;f = 1 MHz VCE = -5 V; IC = -10 mA;f = 100 MHz IC = -200 ìA; VCE = -5 V;RS = 2 kÙ; f = 1 kHz;B = 200 Hz hFE IC = -2 mA; VCE = -5 V Symbol ICBO ICBO IEBO Testconditons VCB = -30 V; IE = 0 VCB = -30 V; IE = 0;Tj = 150 VEB = -5 V; IC = 0 Transistors IC Min Typ -1 Max -15 -4 -100 Unit nA ìA nA 125 125 125 220 420 -75 -250 -700 -850 -600 -650 475 800 250 475 800 -300 -600 mV mV mV mV -750 -820 3 12 mV mV pF pF MHz 10 dB 100 hFE Classification TYPE Marking TYPE Marking TYPE Marking BC856W 3D BC857W 3H BC858W 3M BC856AW 3A BC857AW 3E BC856BW 3B BC857BW 3F BC857CW 3G 2 www.kexin.com.cn