BC857T

S MD Type PNP General Purpose Transistors KC857T(BC857T) SOT-523 Transistors Unit: mm Features Low current (max. 100 mA) Low voltage (max. 45 V). 2 +0.1 1.6-0.1 +0.1 1.0-0.1 +0.05 0.2-0.05 +0.01 0.1-0.01 1 +0.15 1.6-0.15 0.55 +0.25 0.3-0.05 0.5 +0.1 -0.1 0.35 3 1. Base +0.05 0.75-0.05 +0.1 0.8-0.1 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Peak collector current power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICM PD Tj Tstg Rating -50 -45 -5 -100 -200 150 150 -65 to +150 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter collector cut-off current emitter cut-off current KC857AT DC current gain KC857BT KC857CT collector-emitter saturation voltage VCEsat IC = -10 mA; IB = -0.5 mA IC = -100 mA; IB =- 5 mA; * base-emitter voltage collector capacitance emitter capacitance noise figure transition frequency * Pulse test: tp 300 ms; 0.02. VBE Cc Ce F fT IC = -2 mA; VCE = -5 V IC = -10 mA; VCE = -5 V IE = ie = 0; VCB = -10 V; f = 1 MHz IC = ic = 0; VEB = -500 mV; f = 1 MHz IC = -200 A; VCE = -5 V; RS = 2 k 1 kHz; B = 200 Hz ;f = 100 10 10 -600 hFE IC = -2 mA; VCE = -5 V Symbol ICBO IEBO Testconditons IE = 0; VCB =- 30 V IE = 0; VCB = -30 V; Tj = 150 IC = 0; VEB = -5 V 125 220 420 Min Typ Max -15 -5 -100 250 475 800 -200 -400 -750 -820 2.5 mV mV mV mV pF pF dB MHz Unit nA A nA IC = -10 mA; VCE = -5 V; f = 100 MHz Marking NO. Marking KC857AT 3E KC857BT 3F KC857CT 3G +0.05 0.8-0.05 www.kexin.com.cn 1