BCF81

SMD S MD Type NPN General Purpose Transistors BCF81 SOT-23 Transistors IC Unit: mm Low current (max. 100 mA). +0.1 2.4-0.1 Low voltage (max. 45 V). +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features +0.1 2.9-0.1 +0.1 0.4-0.1 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation * Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient * * Transistor mounted on an FR4 printed-circuit board. Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Ramb Rth j-a Rating 50 45 5 100 200 100 250 -65 to +150 150 -65 to +150 500 K/W Unit V V V mA mA mA mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type BCF81 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Symbol ICBO ICBO IEBO hFE VCE(sat) Testconditons IE = 0; VCB = 20 V IE = 0; VCB = 20 V; Tj = 100 IC = 0; VEB = 5 V IC = 2 mA; VCE = 5 V IC = 10 mA; IB = 0.5 mA IC = 50 mA; IB = 2.5 mA Base to emitter saturation voltage Base to emitter voltage Collector capacitance Transition frequency Noise figure VBE(sat) VBE CC fT NF IC = 10 mA; IB = 0.5 mA IC = 50 mA; IB = 2.5 mA IC = 2 mA; VCE = 5 V IE = ie = 0; VCB = 10 V; f = 1 MHz IC = 10 mA; VCE = 5 V; f = 100 MHz IC = 200 ìA; VCE = 5 V; RS = 2 kÙ; 1 kHz; B = 200 Hz f= 100 550 420 Min Transistors IC Typ Max 100 10 100 800 Unit nA ìA nA 120 210 750 850 250 mV mV mV mV 700 2.5 mV pF MHz 1.2 4 dB Marking Marking K9p 2 www.kexin.com.cn