BCP55

S MD Type NPN Medium Power Transistor BCP54; BCP55; BCP56 SOT-223 Transistors Unit: mm +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 Features High collector current 1.3 W power dissipation. +0.2 6.50-0.2 +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 2 2.9 4.6 3 +0.1 0.70-0.1 1 base 2 collector 3 emitter Absolute Maximum Ratings Ta = 25 Parameter collector-base voltage BCP54 BCP55 BCP56 collector-emitter voltage BCP54 BCP55 BCP56 emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature thermal resistance from junction to ambient thermal resistance from junction to soldering point VEBO IC ICM IBM Ptot Tstg Symbol Rating 45 Unit V V V V V V V A A A W VCBO 60 100 45 VCEO 60 80 5 1 1.5 0.2 1.33 -65 to +150 150 -65 to +150 94 13 Tj Tamb Rth j-a Rth j-s K/W K/W +0.15 1.65-0.15 www.kexin.com.cn 1 SMD Type BCP54; BCP55; BCP56 Electrical Characteristics Ta = 25 Parameter collector cut-off current emitter cut-off current Symbol ICBO IEBO Testconditons IE = 0 A; VCB = 30 V IE = 0 A; VCB = 30 V; Tj = 150 IC = 0 A; VEB = 5 V IC = 5 mA; VCE = 2 V DC current gain hFE IC =150 mA; VCE = 2 V IC = 500 mA; VCE = 2 V DC current gain BCP54-10; BCP55-10; BCP56-10 BCP54-16; BCP55-16; BCP56-16 collector-emitter saturation voltage base-emitter voltage transition frequency DC current gain ratio of the complementary pairs VCEsat VBE fT IC = 0.5 A; IB = 50 mA IC = 0.5 A; VCE = 2 V IC = 10 mA; VCE = 5 V; f = 100 MHz |IC| = 150 mA;|VCE| = 2 V hFE VCE = 2 V; IC = 150 mA 63 100 63 63 40 Min Transistors Typ Max 100 10 100 Unit nA ìA nA 250 160 250 500 1 130 1.6 mV V MHz 2 www.kexin.com.cn