BCP68

S MD Type NPN Medium Power Transistor BCP68 SOT-223 Transistors Unit: mm +0.2 3.50-0.2 Features High current. Three current gain selections. 1.4 W total power dissipation. +0.2 6.50-0.2 0.1max +0.05 0.90-0.05 +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 2 2.9 4.6 3 +0.1 0.70-0.1 1 base 2 collector 3 emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Peak collector current Peak base current Total power dissipation *1 *2 *3 Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient * Tamb 25 *1 *2 *3 Thermal resistance from junction to solder point Rth(j-s) Rth(j-a) 200 125 89 15 K/W K/W K/W K/W Tstg Tj Symbol VCBO VCEO VEBO IC ICM IBM Rating 32 20 5 1 2 200 Unit V V V A A mA Ptot 0.625 1 1.4 -65 to +150 150 -65 to +150 W W W Tamb *1 Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. *2 Device mounted on a FR4 PCB; single-sided copper; tinplated; 1 cm2 collector mounting pad. *3 Device mounted on a FR4 PCB; single-sided copper; tinplated; 6 cm2 collector,mounting pad. +0.15 1.65-0.15 www.kexin.com.cn 1 SMD Type BCP68 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain BCP68 hFE DC current gain Collector-emitter saturation voltage Base-emitter voltage Collector capacitance Transition frequency BCP68-25 VCEsat VBE Cc fT Symbol ICBO IEBO Testconditons IE = 0 A; VCB = 25 V IE = 0 A; VCB = 25 V; Tj = 150 IC = 0 A; VEB = 5 V VCE = 10 V; IC = 5 mA VCE = 1 V; IC = 500 mA VCE = 1 V; IC = 1 A VCE = 1 V; IC = 500 mA IC = 100 mA; IB = 1 A; VCE = 10 V; IC = 5 mA VCE = 1 V; IC = 1 A IE = ie = 0 A; VCB = 10 V; f = 1 MHz IC = 50 mA; VCE = 5 V; f = 100 MHz 40 50 85 60 Transistors Min Typ Max 100 10 100 Unit nA ìA nA 375 160 375 500 700 1 22 170 mV mV V pF MHz hFE Classification TYPE Marking BCP68 BCP68 BCP68-25 BCP68/25 2 www.kexin.com.cn