SMD S MD Type
NPN General Purpose Transistors BCW31,BCW32,BCW33
Transistors IC
SOT-23
Unit: mm
Features
Low current (max. 100 mA).
+0.1 2.4-0.1
+0.1 2.9-0.1 +0.1 0.4-0.1
Low voltage (max. 32 V).
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient * * Transistor mounted on an FR4 printed-circuit board. Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Ramb Rth j-a Rating 32 32 5 100 200 200 250 -65 to +150 150 -65 to +150 500 K/W Unit V V V mA mA mA mW
+0.1 0.38-0.1
0-0.1
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1
SMD Type
BCW31,BCW32,BCW33
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Emitter cutoff current BCW31 DC current gain BCW32 BCW33 Collector-emitter saturation voltage VCE(sat) IC = 10 mA; IB = 0.5 mA IC = 50 mA; IB = 2.5 mA Base to emitter saturation voltage Base to emitter voltage Collector capacitance Transition frequency Noise figure VBE(sat) VBE CC fT NF IC = 10 mA; IB = 0.5 mA IC = 50 mA; IB = 2.5 mA IC = 2 mA; VCE = 5 V IE = ie = 0; VCB = 10 V; f = 1 MHz IC = 10 mA; VCE = 5 V; f = 100 MHz IC = 200 ìA; VCE = 5 V; RS = 2 kÙ; f = 1 kHz; B = 200 Hz hFE IC = 2 mA; VCE = 5 V Symbol ICBO ICBO IEBO Testconditons IE = 0; VCB = 32 V IE = 0; VCB = 32 V; Tj = 100 IC = 0; VEB = 5 V
Transistors IC
Min
Typ
Max 100 10 100
Unit nA ìA nA
110 200 420 120 210 750 850 550 2.5 100
120 450 800 250 mV mV mV mV 700 mV pF MHz 10 dB
hFE Classification
TYPE Marking BCW31 D1 BCW32 D2 BCW33 D3
2
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