BCW60D

SMD S MD Type NPN General Purpose Transistors BCW60A/B/C/D Transistors IC SOT-23 Unit: mm Features NPN epitaxial silicon transistor. +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Storage temperature Symbol VCBO VCEO VEBO IC Pc Tstg Rating 32 32 5 100 350 150 Unit V V V mA mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type BCW60A/B/C/D Electrical Characteristics Ta = 25 Parameter Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cutoff current BCW60B BCW60C BCW60D BCW60A BCW60B DC Current Gain BCW60C BCW60D BCW60A BCW60B BCW60C BCW60D Collector-Emitter Saturation Voltage VCE(sat) IC = 50 mA; IB = 1.25 mA IC = 10 mA; IB = 0.25 mA Base to emitter saturation voltage Base to emitter voltage Collector capacitance Transition frequency Noise figure Turn On Time Turn Off Time VBE(sat) VBE(on) Cob fT NF ton toff IC = 50 mA; IB = 1.25 mA IC = 10 mA; IB = 0.25 mA IC = 2 mA; VCE = 5 V IE = ie = 0; VCB = 10 V; f = 1 MHz IC = 10 mA; VCE = 5 V; f = 100 MHz IC = 0.2 mA; VCE = 5 V; RG = 2 kÙ; f = 1 kHz IC=10mA, IB1=1mA VBB=3.6V, IB2=1mA R1=R2=5K , RL=990 125 0.7 0.6 0.55 VCE=1V, IC=50mA hFE VCE=5V, IC=2mA VCE=5V, IC=10ìA Symbol BVCEO BVEBO ICES IEBO Testconditons IC=2mA, IB=0 IE=1ìA, IC=0 VCE=32V, VBE=0 IC = 0; VEB = 4 V 20 40 100 120 180 250 380 60 70 90 10 Min 32 5 Transistors IC Typ Max Unit 20 20 nA nA 220 310 460 630 0.55 0.35 1.05 0.85 0.75 4.5 V V V V V pF MHz 6 150 800 dB ns ns Marking TYPE Marking BCW60A AA BCW60B AB BCW60C AC BCW60D AD 2 www.kexin.com.cn