BCW61D

SMD S MD Type General Purpose Transistor BCW61A/B/C/D Transistors IC Features PNP Epitaxial Silicon Transistor SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 unless otherwise noted Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature Symbol VCBO VCEO VEBO IC PC TSTG Rating -32 -32 -5 -100 350 -55 to +150 Unit V V V mA mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type BCW61A/B/C/D Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current BCW61B DC current gain BCW61C BCW61D BCW61B DC current gain BCW61C BCW61D BCW61B DC current gain BCW61C BCW61D Collector-emitter saturation voltage VCE(sat) IC = -10 mA; IB = -0.25 mA IC = -50 mA; IB = -1.25 mA Base to emitter saturation voltage Base to emitter voltage Collector capacitance Emitter capacitance Transition frequency * Noise figure * Pulse test: tp 300 ìs; d 0.02. VBE(sat) VBE CC Ce fT NF IC = -10 mA; IB = -0.25 mA IC = -50 mA; IB = -1.25 mA IC = -2 mA; VCE = -5 V IE = ie = 0; VCB = -10 V; f = 1 MHz IC = ic = 0; VEB = -0.5 V; f = 1 MHz IC = -10 mA; VCE = -5 V; f = 100 MHz IC = -200 ìA; VCE = -5 V; RS = 2 kÙ; f = 1 kHz; B = 200 Hz 100 hFE IC = -50 mA; VCE = -5 V hFE IC = -2 mA; VCE = -5 V hFE IC = -10ìA; VCE = -5 V Symbol ICBO ICBO IEBO Testconditons IE = 0; VCB = -32 V IE = 0; VCB = -32 V; Tamb = 150 IC = 0; VEB = -4 V 30 40 100 180 250 380 80 100 110 -60 -120 -600 -0.68 -600 Min Transistors IC Typ Max -20 -20 -20 Unit nA ìA nA 310 460 630 -250 -550 -850 -1.05 -650 4.5 11 -750 mV mV mV V mV pF pF MHz 2 6 dB Marking TYPE Marking BCW61A BA BCW61B BB BCW61C BC BCW61D BD 2 www.kexin.com.cn