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BCW68

BCW68

  • 厂商:

    KEXIN(科信)

  • 封装:

  • 描述:

    BCW68 - PNP General Purpose Transistors - Guangdong Kexin Industrial Co.,Ltd

  • 数据手册
  • 价格&库存
BCW68 数据手册
SMD S MD Type PNP General Purpose Transistors BCW67,BCW68 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 For general AF applications. High current gain. Low collector-emitter saturation voltage. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation,TS = 79 Junction temperature Storage temperature Junction - soldering point Symbol VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg RthJS BCW67 -45 -32 -5 -800 -1000 -100 -200 330 150 -65 to +150 215 K/W BCW68 -60 -45 -5 Unit V V V mA mA mA mA mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type BCW67,BCW68 Electrical Characteristics Ta = 25 Parameter Collector-emitter breakdown voltage BCW67 BCW68 Collector-base breakdown voltage Emitter-base breakdown voltage BCW67 Collector cutoff current BCW68 BCW67 BCW68 Emitter cutoff current A/F DC current gain * hFE-group B/G C/H A/F DC current gain * hFE-group B/G C/H A/F DC current gain * hFE-group B/G C/H Collector-emitter saturation voltage * VCE(sat) IC = -100 mA, IB = -10 mA IC = -500 mA, IB = -50 mA Base-emitter saturation voltage Transition frequency Collector-base capacitance Emitter-base capacitance * Pulse test: t 300ìs, D = 2%. * VBE(sat) fT Ccb Ceb IC = -100 mA, IB = -10 mA IC = -500 mA, IB = -50 mA IC = -50 mA, VCE = -5 V, f = 20 MHz VCB = -10 V, f = 1 MHz VEB = -0.5 V, f = 1 MHz hFE IC = -100 mA, VCE = -1 V hFE IC = 10 mA, VCE = 1 V hFE IC = 100 ìA, VCE = 10 V IEBO ICBO BCW67 BCW68 V(BR)EBO IE = -10ìA, IC = 0 ICBO VCB = -32 V, IE = 0 VCB = -45 V, IE = 0 VCB = -32 V, IE = 0 , TA = 150 VCB = -45 V, IE = 0 , TA = 150 VEB = -4 V, IC = 0 35 50 80 75 120 180 100 160 250 V(BR)CBO IC = -10 ìA, IE = 0 Symbol Testconditons Min -32 -45 -45 -60 -5 Transistors IC Typ Max Unit V V(BR)CEO IC = -10 mA, IB = 0 V V -20 -20 -20 -20 -20 nA ìA nA 160 250 350 250 400 630 -0.3 -0.7 -1.25 -2 V 200 6 60 MHz pF hFE Classification TYPE Rank Marking TYPE Rank Marking F DFs A DAs BCW67 B DBs BCW68 G DGs H DHs C DCs 2 www.kexin.com.cn
BCW68 价格&库存

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BCW68GLT1G
  •  国内价格
  • 1+0.16644
  • 30+0.16172
  • 100+0.157
  • 500+0.14755
  • 1000+0.14283
  • 2000+0.14

库存:189

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