BCW70

SMD S MD Type PNP General Purpose Transistors BCW69,BCW70 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Low current (max. 100 mA). Low voltage (max. 45 V). 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Features 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient * * Transistor mounted on an FR4 printed-circuit board. Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Ramb Rth j-a Rating -50 -45 -5 -100 -200 -200 250 -65 to +150 150 -65 to +150 500 K/W Unit V V V mA mA mA mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type BCW69,BCW70 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain BCW69 BCW70 DC current gain BCW69 BCW70 Collector-emitter saturation voltage VCE(sat) IC = -10 mA; IB = -0.5 mA IC = -50 mA; IB = -2.5 mA * Base to emitter saturation voltage Base to emitter voltage Collector capacitance Transition frequency Noise figure * Pulse test: tp 300 ìs; d 0.02. VBE(sat) VBE CC fT NF IC = -10 mA; IB = -0.5 mA IC = -50 mA; IB = -2.5 mA * IC = -2 mA; VCE = -5 V IE = ie = 0; VCB = -10 V; f = 1 MHz IC = -10 mA; VCE = -5 V; f = 100 MHz IC = -200 ìA; VCE = -5 V; RS = 2 kÙ; f = 1 kHz; B = 200 Hz hFE IC = -2 mA; VCE = -5 V Symbol ICBO ICBO IEBO hFE Testconditons IE = 0; VCB = -20 V IE = 0; VCB = -20 V; Tj = 100 IC = 0; VEB = -5 V IC = -10 ìA; VCE = -5 V Transistors IC Min Typ Max -100 -10 -100 Unit nA ìA nA 90 150 120 215 -80 -150 -720 -810 -600 4.5 100 10 -750 260 500 mV mV mV mV mV pF MHz dB hFE Classification TYPE Marking BCW69 H1 BCW70 H2 2 www.kexin.com.cn