BCW72

SMD S MD Type NPN General Purpose Transistors BCW71,BCW72 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Low current (max. 100 mA). Low voltage (max. 45 V). Low noise. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Features 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient * * Transistor mounted on an FR4 printed-circuit board. Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Ramb Rth j-a Rating 50 45 5 100 200 200 250 -65 to +150 150 -65 to +150 500 K/W Unit V V V mA mA mA mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type BCW71,BCW72 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain BCW71 BCW72 DC current gain BCW71 BCW72 Collector-emitter saturation voltage VCE(sat) IC = 10 mA; IB = 0.5 mA IC = 50 mA; IB = 2.5 mA Base to emitter saturation voltage Base to emitter voltage Collector capacitance Transition frequency Noise figure VBE(sat) VBE CC fT NF IC = 10 mA; IB = 0.5 mA IC = 50 mA; IB = 2.5 mA IC = 2 mA; VCE = 5 V IE = ie = 0; VCB = 10 V; f = 1 MHz IC = 10 mA; VCE = 5 V; f = 100 MHz IC = 200 ìA; VCE = 5 V; RS = 2 kÙ; f = 1 kHz; B = 200 Hz hFE IC = 2 mA; VCE = 5 V Symbol ICBO ICBO IEBO hFE Testconditons IE = 0; VCB = 20 V IE = 0; VCB = 20 V; Tj = 100 IC = 0; VEB = 5 V IC = 10 ìA; VCE = 5 V Transistors IC Min Typ Max 100 10 100 Unit nA ìA ìA 90 150 110 200 120 210 750 850 550 2.5 100 10 700 120 450 250 mV mV mV mV mV pF MHz dB hFE Classification TYPE Marking BCW71 K1 BCW72 K2 2 www.kexin.com.cn