BCX18

SMD S MD Type PNP General Purpose Transistors BCX17,BCX18 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Features Low current (max. 100 mA). Low voltage (max. 32 V). +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation * Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient * Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Ramb Rth j-a BCX17 -50 -45 -5 -500 -1000 -200 250 -65 to +150 150 -65 to +150 500 K/W BCX18 -30 -25 Unit V V V mA mA mA mW * Transistor mounted on an FR4 printed-circuit board. Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current Symbol ICBO ICBO IEBO Testconditons IE = 0; VCB = -20 V IE = 0; VCB = -20 V; Tj = 100 IC = 0; VEB = -5 V IC = -100 mA; VCE = -1 V DC current gain hFE IC = -300 mA; VCE = -1 V IC = -500 mA; VCE = -1 V Collector-emitter saturation voltage Base to emitter voltage Collector capacitance Transition frequency VCE(sat) VBE CC fT IC = -500 mA; IB = -50 mA IC = -500 mA; VCE = -1 V IE = ie = 0; VCB = -10 V; f = 1 MHz IC = -10 mA; VCE = -5 V; f = 100 MHz 80 9 100 70 40 -620 -1.2 mV V pF MHz Min Typ Max -100 -5 -100 600 Unit nA ìA nA hFE Classification TYPE Marking BCX17 T1 BCX18 T2 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1