BCX41

S MD Type Medium Power Transistor BCX41 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 +0.1 1.3-0.1 SOT23 NPN silicon planar 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current Base current Power dissipation Operating and storage temperature range Symbol VCES VCEO VEBO ICM IC IB Ptot Tj,Tstg Rating 125 125 5 1 800 100 330 -55 to +150 Unit V V V A mA mA mW Electrical Characteristics Ta = 25 Parameter Collector-emitter cut-off current Symbol ICES ICEX Emitter-base current Collector-emitter saturation voltage * Base-emitter saturation voltage * DC current gain * Transitional frequency Output capacitance * Pulse test: tp = 300 ìs; d 0.02. IEBO Testconditons VCE=100V VCE=100V,Tamb = 150 VCE=100V,VBE=0.2V, Tamb = 85 VCE=100V,VBE=0.2V, Tamb = 125 VEB=4V Min Typ Max 100 10 10 75 100 0.9 1.4 25 63 40 100 12 MHz pF Unit nA ìA ìA ìA nA V V VCE(sat) IC=300mA, IB=30mA VBE(sat) IC=300mA, IB=30mA hFE fT Cobo IC=100ìA,VCE=1V IC=100mA,VCE=1V IC=200mA,VCE=1V IC=10mA, VCE=5V, f=20MHz VCB=10V, f=1MHz,IE=Ie=0 Marking Marking EK +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1