BCX52-16

S MD Type PNP Medium Power Transistors BCX51,BCX52,BCX53 Transistors Features High current (max. 1 A). Low voltage (max. 80 V). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage BCX51 BCX52 BCX53 Collector-emitter voltage BCX51 BCX52 BCX53 Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient Thermal resistance from junction to solder point VEBO IC ICM IBM Ptot Tstg Tj Ramb Rth(j-a) Rth(j-s) VCEO Symbol VCBO Rating -45 -60 -100 -45 -60 -80 -5 -1 -1.5 -200 1.3 -65 to +150 150 -65 to +150 94 14 K/W K/W Unit V V V V V V V A A mA W www.kexin.com.cn 1 SMD Type BCX51,BCX52,BCX53 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Symbol ICBO Testconditons VCB = -30 V, IE = 0 VCB = -30 V, IE = 0; Tj = 125 Emitter cutoff current DC current gain IEBO hFE VEB = -5 V, IC = 0 IC = -5 mA; VCE = -2 V IC = -150 mA; VCE = -2 V IC = -500 mA; VCE = -2 V DC current gain BCX51-10,BCX52-10,BCX53-10 BCX51-16,BCX52-16,BCX53-16 Collector-emitter saturation voltage Base to emitter voltage Transition frequency hFE IC = -150 mA; VCE = -2 V IC = -150 mA; VCE = -2 V VCE(sat) IC = -500 mA; IB = -50 mA VBE fT IC = -500 mA; VCE = -2 V IC = -10 mA; VCE = -5 V; f = 100 MHz Transistors Min Typ Max -100 -10 -100 Unit nA ìA nA 63 63 40 63 100 160 250 -500 -1 50 mV V MHz 250 hFE Classification TYPE Marking TYPE Marking TYPE Marking BCX51 AA BCX52 AE BCX53 AH BCX51-10 AC BCX52-10 AG BCX53-10 AK BCX51-16 AD BCX52-16 AM BCX53-16 AL 2 www.kexin.com.cn