BCX56-10

S MD Type NPN Medium Power Transistors BCX54,BCX55,BCX56 Transistors Features High current (max. 1 A). Low voltage (max. 80 V). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage BCX54 BCX55 BCX56 Collector-emitter voltage BCX54 BCX55 BCX56 Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient Thermal resistance from junction to solder point VEBO IC ICM IBM Ptot Tstg Tj Ramb Rth(j-a) Rth(j-s) VCEO Symbol VCBO Rating 45 60 100 45 60 80 5 1 1.5 0.2 1.3 -65 to +150 150 -65 to +150 94 14 K/W K/W Unit V V V V V V V A A A W www.kexin.com.cn 1 SMD Type BCX54,BCX55,BCX56 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Symbol ICBO Testconditons VCB = 30 V, IE = 0 VCB = 30 V, IE = 0; Tj = 125 Emitter cutoff current DC current gain IEBO hFE VEB = 5 V, IC = 0 IC = 5 mA; VCE = 2 V IC = 150 mA; VCE = 2 V IC = 500 mA; VCE = 2 V DC current gain BCX54-10,BCX55-10,BCX56-10 BCX54-16,BCX55-16,BCX56-16 Collector-emitter saturation voltage Base to emitter voltage Transition frequency DC current gain ratio of the complementary pairs hFE IC = 150 mA; VCE = 2 V IC = 150 mA; VCE = 2 V VCE(sat) IC = 500 mA; IB = 50 mA VBE fT hFE hFE IC = 500 mA; VCE = 2 V IC = 10 mA; VCE = 5 V; f = 100 MHz IC = 150 mA; VCE = 2V Transistors Min Typ Max 100 10 100 Unit nA ìA nA 63 63 40 63 100 160 250 0.5 1 130 1.3 1.6 V V MHz 250 hFE Classification TYPE Marking TYPE Marking TYPE Marking BCX54 BA BCX55 BE BCX56 BH BCX54-10 BC BCX55-10 BG BCX56-10 BK BCX54-16 BD BCX55-16 BM BCX56-16 BL 2 www.kexin.com.cn