BCX69-16

S MD Type PNP Silicon AF Transistors BCX69 SOT-89 +0.1 4.50-0.1 +0.1 1.80-0.1 Transistors Unit: mm +0.1 1.50-0.1 Features +0.1 2.50-0.1 +0.1 0.48-0.1 +0.1 0.53-0.1 For general AF applications. High collector current. +0.1 4.00-0.1 +0.1 2.60-0.1 Low collector-emitter saturation voltage. +0.1 0.80-0.1 High current gain. +0.1 0.44-0.1 +0.1 3.00-0.1 +0.1 0.40-0.1 1. Base 2. Collector 3. Emiitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation Junction temperature Storage temperature Junction - soldering point Symbol VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg RthJS Rating 20 25 5 1 2 100 200 1 150 -65 to +150 20 K/W Unit V V V A A mA mA W www.kexin.com.cn 1 SMD Type BCX69 Electrical Characteristics Ta = 25 Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cutoff current DC current gain * BCX69 DC current gain * BCX69-10 BCX69-16 BCX69-25 DC current gain * Collector-emitter saturation voltage * Base-emitter voltage * hFE VCE(sat) VBE(ON) IC = 1A, VCE = 1V IC = 1 A, IB = 100 mA IC = 5 mA, VCE = 10 V IC = 1 A, VCE = 1 V Transition frequency * Pulse test: t 300ìs, D = 2%. fT IC = 100 mA, VCE = 5 V, f = 20 MHz hFE IC = 500 mA, VCE = 1 V Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO hFE Testconditons IC = 30 mA, IB = 0 IC = 10 ìA, IB = 0 IE = 1 ìA, IC = 0 VCB = 25 V, IE = 0 VCB = 25 V, IE = 0 , TA = 150 IC = 5 mA, VCE = 10 V 50 85 85 Transistors Min 20 25 5 Typ Max Unit V V V 100 100 nA ìA 375 100 160 250 160 250 375 100 160 60 0.5 0.6 1 100 MHz V hFE Classification TYPE Marking BCX69 CE BCX69-10 CF BCX69-16 CG BCX69-25 CH 2 www.kexin.com.cn