SMD S MD Type
NPN General Purpose Transistors BCX70 series
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
Features
+0.1 2.4-0.1
Low current (max. 100 mA). Low voltage (max. 45 V).
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Collector dissipation Junction temperature Storage temperature Operating ambient temperature Thermal resistance from junction to ambient * * Transistor mounted on an FR4 printed-circuit board. Symbol VCBO VCEO VEBO IC ICM IBM PC Tj Tstg Tamb Rth(j-a) Rating 45 45 5 100 200 200 250 150 -65 to +150 -65 to +150 500 K/W Unit V V V mA mA mA mW
+0.1 0.38-0.1
0-0.1
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1
SMD Type
BCX70 series
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Emitter cutoff current BCX70G BCX70H BCX70J BCX70K BCX70G DC current gain BCX70H BCX70J BCX70K BCX70G DC current gain BCX70H BCX70J BCX70K Collector-emitter saturation voltage VCE(sat) IC = 10 mA; IB =0.25 mA IC = 50mA; IB = 1.25 mA Base to emitter saturation voltage Base to emitter voltage Collector capacitance Emitter capacitance Transition frequency * Noise figure * Pulse test: tp 300 ìs; d 0.02. VBE(sat) VBE CC Ce fT NF IC = 10 mA; IB =0.25 mA IC = 50mA; IB = 1.25 mA IC = 2 mA; VCE = 5 V IE = ie = 0; VCB = 10 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = 10 mA; VCE = 5 V; f = 100 MHz IC = 200 ìA; VCE = 5 V; RS = 2 kÙ; f = 1 kHz; B = 200 Hz 100 hFE IC = 50 mA; VCE = 1 V hFE IC = 2 mA; VCE = 5 V hFE IC = 10 ìA; VCE = 5 V 40 30 100 120 180 250 380 50 70 90 100 50 100 600 700 550 Symbol ICBO ICBO IEBO Testconditons IE = 0; VCB = 45 V IE = 0; VCB = 45 V; Tj = 150 IC = 0; VEB = 4 V Min
Transistors IC
Typ
Max 20 20 20
Unit nA ìA nA
220 310 460 630
350 550 850 1050 650 1.7 11 250 2 6 750
mV mV mV mV mV pF pF MHz dB
hFE Classification
Type Number Marking BCX70G AG BCX70H AH BCX70J AJ BCX70K AK
2
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