BF550

SMD S MD Type PNP Medium Frequency Transistor BF550 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 Low voltage (max. 40 V). 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Low current (max. 25 mA). 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Total power dissipation * Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient * * Transistor mounted on an FR4 printed-circuit board. Symbol VCBO VCEO VEBO IC ICM Ptot Tstg Tj Ramb Rth j-a Rating -40 -40 -4 -25 -25 250 -65 to +150 150 -65 to +150 500 K/W Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Base to emitter voltage Feedback capacitance Transition frequency Symbol ICBO IEBO hFE VBE Cre fT Testconditons IE = 0; VcB = -30 V Ic = 0; VEB = -3 V Ic = -1 mA; VcE = -10 V Ic = -1 mA; VcE = -10 V Ic = -1 mA; VcB = -10 V; f = 1 MHz IC = -1 mA; VCE = -10 V; f = 100 MHz 50 750 0.5 325 mV pF MHz Min Typ Max -50 -100 Unit nA nA Marking Marking LA +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1