BF622

S MD Type Silicon NPN epitaxial planer type BF620; BF622 Transistors Features Low current (max. 50 mA) High voltage (max. 300 V). Absolute Maximum Ratings Ta = 25 Parameter collector-base voltage (open emitte) collector-emitter voltage (open-base ) emitter-base voltage (open collector) collector current (DC) peak collector current peak base current total power dissipation Tamb storage temperature junction temperature operating ambient temperature thermal resistance from junction to ambient * thermal resistance from junction to soldering point 25 * BF620 BF622 BF620 BF622 VEBO IC ICM IBM Ptot Tstg Tj Tamb Rth j-a Rth j-s VCEO Symbol VCBO Rating 300 250 300 250 5 50 100 50 1.25 -65 to150 150 -65 to150 100 20 K/W K/W Unit V V V V V mA mA mA W * Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2. www.kexin.com.cn 1 SMD Type BF620; BF622 Electrical Characteristics Ta = 25 Parameter collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage feedback capacitance transition frequency Transistors unless otherwise specified. Symbol V(BR)CBO IEBO hFE VCEsat Cre fT Testconditons IE = 0; VCB = 200 V IE = 0; VCB = 200 V; Tj = 150 IC = 0; VEB = 5 V IC = 25 mA; VCE = 20 V IC = 30 mA; IB = 5 mA IC = ic = 0; VCE = 30 V; f = 1 MHz IC = 10 mA; VCE = 10 V; f = 100 MHz 60 50 600 1.6 mV pF MHz Min Typ Max 10 10 50 Unit nA mA nA Marking Type Number Marking BF620 DC BF622 DA 2 www.kexin.com.cn