BF820

S MD Type NPN High-Voltage Transistors BF820,BF822 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm +0.1 2.4-0.1 Low current (max. 50 mA) High voltage (max. 300 V). 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Features 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage BF820 BF822 Collector-emitter voltage BF820 BF822 Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation * Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient * * Transistor mounted on an FR4 printed-circuit board. VEBO IC ICM IBM Ptot Tstg Tj Ramb Rth j-a VCEO Symbol VCBO Rating 300 250 300 250 5 50 100 50 250 -65 to +150 150 -65 to +150 500 K/W Unit V V V V V mA mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * collector-emitter saturation voltage Feedback capacitance Transition frequency Symbol ICBO IEBO hFE VCEsat Cre fT Testconditons IE = 0; VCB = 200 V IE = 0; VCB = 200 V; Tj = 150 IC = 0; VEB = 5 V IC = 25 mA; VCE = 20 V IC = 30 mA; IB = 5 mA IC = ic = 0; VCB = 30 V; f = 1 MHz IC = 10 mA; VCE = 10 V; f = 100 MHz 60 50 600 1.6 mV pF MHz Min Typ Max 10 10 50 Unit nA ìA nA hFE Classification TYPE Marking BF820 1V BF822 1X +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1