BF820W

S MD Type NPN High-Voltage Transistor BF820W Transistors Features Low current (max. 50 mA) High voltage (max. 300 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current Peak collector current Peak base current Total power dissipation * Tamb Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient * * Transistor mounted on an FR4 printed-circuit board. 25 Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Ramb Rth j-a Rating 300 300 5 50 100 50 200 -65 to +150 150 -65 to +150 625 K/W Unit V V V mA mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage * Feedback capacitance Transition frequency * Pulse test: tp 300 ìs; ä 0.02. Symbol ICBO IEBO hFE VCEsat Cre fT Testconditons IE = 0; VCB = 200 V IE = 0; VCB = 200 V; Tj = 150 IC = 0; VEB = 5 V IC = 25 mA; VCE = 20 V IC = 30 mA; IB = 5 mA IC = 0; VCB = 30 V; f = 1 MHz IC = 10 mA; VCE = 10 V; f=100MHz 60 50 600 1.6 mV pF MHz Min Typ Max 10 10 50 Unit nA ìA nA Marking Marking 1V www.kexin.com.cn 1