BF821

S MD Type PNP High-Voltage Transistors BF821,BF823 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 Low current (max. 50 mA) High voltage (max. 300 V). +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage BF821 BF823 Collector-emitter voltage BF821 BF823 Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation * Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient * VEBO IC ICM IBM Ptot Tstg Tj Ramb Rth j-a VCEO Symbol VCBO Rating -300 -250 -300 -250 -5 -50 -100 -50 250 -65 to +150 150 -65 to +150 500 K/W Unit V V V V V mA mA mA mW * Transistor mounted on an FR4 printed-circuit board. Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain collector-emitter saturation voltage Feedback capacitance Transition frequency Symbol ICBO IEBO hFE VCEsat Cre fT Testconditons IE = 0; VCB = -200 V IE = 0; VCB = -200 V; Tj = 150 IC = 0; VEB = -5 V IC = -25 mA; VCE = -20 V IC = -30 mA; IB = -5 mA IC = ic = 0; VCB = -30 V; f = 1 MHz IC = -10 mA; VCE = -10 V; f = 100 MHz 60 50 -800 1.6 mV pF MHz Min Typ Max -10 -10 -50 Unit nA ìA nA hFE Classification TYPE Marking BF821 1W BF823 1Y +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1