BF824W

SMD S MD Type PNP Medium Frequency Transistor BF824W Transistors IC Features Low current (max. 25 mA). Low voltage (max. 30 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Total power dissipation * Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient * * Transistor mounted on an FR4 printed-circuit board. Symbol VCBO VCEO VEBO IC ICM Ptot Tstg Tj Ramb Rth j-a Rating -30 -30 -4 -25 -25 200 -65 to +150 150 -65 to +150 625 K/W Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Base to emitter voltage Feedback capacitance Symbol ICBO IEBO hFE VBE Crb Testconditons IE = 0; VCB = -30 V IE = 0; VCB = -30 V; Tj = 150 IC = 0; VEB = -4 V IC = -1 mA; VCE = -10 V IC = -4 mA; VCE = -10 V IC = -4 mA; VCE = -10 V IC = 0; VCE = -10 V; f = 1 MHz VCE = -10 V; f = 100 MHz; IC = -1 mA IC = -4 mA IC = -8 mA 250 400 390 25 25 -900 0.3 mV pF Min Typ Max -50 -10 -100 Unit nA ìA nA Transition frequency fT MHz Marking Marking F8 www.kexin.com.cn 1