BF840

SMD S MD Type NPN Medium Frequency Transistor BF840 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 Low voltage (max. 40 V). 0.55 Low current (max. 25 mA). +0.1 1.3-0.1 Features 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Total power dissipation * Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient * * Transistor mounted on an FR4 printed-circuit board. Symbol VCBO VCEO VEBO IC ICM Ptot Tstg Tj Ramb Rth j-a Rating 40 40 4 25 25 250 -65 to +150 150 -65 to +150 500 K/W Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Base to emitter voltage Feedback capacitance Transition frequency Symbol ICBO IEBO hFE VBE Cre fT Testconditons IE = 0; VcB = 20 V Ic = 0; VEB = 4 V Ic = 1 mA; VcE = 10 V Ic = 1 mA; VcE = 10 V Ic = 0; VcB = 10 V; f = 1 MHz Ic = 1 mA; VcE = 10 V; f = 100 MHz 67 675 725 0.3 380 Min Typ Max 100 100 222 775 mV pF MHz Unit nA nA Marking Marking NC +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1