BFS19

S MD Type Transistors NPN Medium Frequency Transistor BFS19 SOT-23 Unit: mm Features 3 +0.1 2.9-0.1 +0.1 0.4-0.1 Low current (max. 30 mA) +0.1 2.4-0.1 Low Voltage (max. 20 V) +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings TA=25 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Total power dissipation Storage temperature Junction temperature Operating ambient temperature Symbol VCBO VCEO VEBO IC ICM Ptot Tstg Tj Tamb Max 30 20 5 30 30 250 150 150 150 Unit V V V mA mA mW Electrical Characteristics TA=25 Parameter Collector-base Breakdown voltage Collector-emitter Breakdown voltage Emitter-base Breakdown voltage Collector-base cutoff current Emitter-base cutoff current Forward current transfer ratio Emitter-base voltage Transition frequency Collector capacitance Feedback capacitance 3 Symbol BVCBO BVCEO BVEBO ICBO VCB = 20 V , IE = 0, Tj = 100 IEBO hFE VBE fT CC Cre VEB = 5.0 V , IC = 0 VCE = 10 V , IC = 1.0 mA VCE = 10 V , IC = 1.0 mA VCE = 10 V , IC = 1 mA ,f = 100 MHZ VCB = 10 V , IE = 1 mA ,f = 1 MHZ VCB = 10 V , IC = 0 mA, f = 1 MHz 65 650 260 1 0.85 10 100 225 740 mV MHz pF pF ìA nA Test conditions IC = 100 ìA , IE = 0 IC = 1mA , IB = 0 IE = 100 ìA , IC = 0 VCB = 20 V , IE = 0 Min 30 20 5 100 Typ Max Unit V V V nA Marking Marking F2 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn www.kesenes.com 1