BFS20

S MD Type NPN Medium Frequency Transistor KFS20(BFS20) SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 Low voltage (max. 20 V) 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Low current (max. 25 mA) Very low feedback capacitance (typ. 350 fF). 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current power dissipation Thermal resistance from junction to ambient * Junction temperature Storage temperature * Transistor mounted on an FR4 printed-circuit board. Symbol VCBO VCEO VEBO IC ICM PD Rth j-a Tj Tstg Rating 30 20 4 25 25 250 500 150 -65 to +150 Unit V V V mA mA mW K/W Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Base to emitter voltage Collector capacitance Freedback capacitance Transition frequency Symbol ICBO ICBO IEBO hFE VBE CC Cre fT Testconditons IE = 0; VCB = 20 V IE = 0; VCB = 20 V; Tj = 100 IC = 0; VEB = 4V IC = 7mA; VCE = 10 V IC = 7 mA; VCE = 10V IE = ie = 0; VCB = 10 V; f = 1 MHz IC=0,VCB=10V,f=1MHz IC =5mA; VCE =10 V; f = 100 MHz 275 40 85 740 1 350 450 900 mV pF pF MHz Min Typ Max 100 10 100 Unit nA A nA Marking Marking G1 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1