BSP16

S MD Type PNP High-Voltage Transistor BSP16 SOT-223 6.50 +0.2 -0.2 Transistors Unit: mm +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 Features High voltage (max. 350 V). +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 1 2 2.9 4.6 3 +0.1 0.70-0.1 2 Collector 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Parameter collector-base voltage (open emitter) collector-emitter voltage (open base) emitter-base voltage (open collector) collector current (DC) base current (DC) total power dissipation storage temperature junction temperature operating ambient temperature thermal resistance from junction to ambient * thermal resistance from junction to soldering point Tamb 25 * Symbol VCBO VCEO VEBO IC IB Ptot Tstg Tj Tamb Rth j-a Rth j-s Rating -350 -300 -6 -200 -200 1.28 -65 to 150 150 -65 to 150 97 16 K/W K/W Unit V V V mA mA W * . Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. Electrical Characteristics Ta = 25 Parameter collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage collector capacitance transition frequency Symbol ICBO IEBO hFE VCEsat Cc fT Testconditons IE = 0; VCB = -280 V IC = 0; VEB = -6 V IC = -50 mA; VCE = -10 V IC = -50 mA; IB = -5 mA IE = ie = 0; VCB = -10 V; f = 1 MHz IC = -10 mA; VCE = -10 V; f = 100 MHz 15 30 Min Typ Max -100 -100 120 -2 15 V pF MHz Unit nA nA +0.15 1.65-0.15 www.kexin.com.cn 1