BSR15

SMD S MD Type PNP Switching Transistors BSR15 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 High current (max. 600 mA). Low voltage (max. 60 V). +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient * * Transistor mounted on an FR4 printed-circuit board. Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Ramb Rth j-a Rating -60 -40 -5 -600 -800 -200 250 -65 to +150 150 -65 to +150 500 K/W Unit V V V mA mA mA mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type BSR15 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current Symbol ICBO IEBO Testconditons IE = 0; VCB = -50 V IE = 0; VCB = -50 V; Tj = 150 IC = 0; VEB = -5 V IC = -0.1 mA; VCE = -10 V IC = -1 mA; VCE = -10 V DC current gain hFE IC = -10 mA; VCE = -10 V IC = -150 mA; VCE = -10 V* IC = -500 mA; VCE = -10 V; * collector-emitter saturation voltage VCEsat IC = -150 mA; IB = -15 mA IC = -500 mA; IB = -50 mA base-emitter saturation voltage Collector capacitance Emitter capacitance Transition frequency Turn-on time Delay time Rise time Turn-off time Storage time Fall time * Pulse test: tp 300 ìs; d 0.02. VBEsat Cc Ce fT ton td tr toff ts tf IC = -150 mA; IB = -15 mA IC = -500 mA; IB = -50 mA IE = ie = 0; VCB = -10 V; f = 1 MHz IC = ic = 0; VEB = -2 V; f = 1 MHz IC = -50 mA; VCE = -20 V; f = 100 MHz ICon = -150 mA; IBon = -15 mA; IBoff = 15 mA ( see Fig ) 35 50 75 Transistors IC Min Typ Max -20 -20 -50 Unit nA ìA nA 100 30 300 -400 -1.6 -1.3 -2.6 8 30 200 40 12 30 365 300 65 mV V V V pF MHz ns ns ns ns ns ns Marking Marking T7 2 www.kexin.com.cn