BSR17A

SMD S MD Type NPN Switching Transistors BSR17A SOT-23 Transistors IC Unit: mm High current (max. 100 mA). +0.1 2.4-0.1 Low voltage (max. 40 V). +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features +0.1 2.9-0.1 +0.1 0.4-0.1 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient * * Transistor mounted on an FR4 printed-circuit board. Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Ramb Rth j-a Rating 60 40 6 100 200 100 250 -65 to +150 150 -65 to +150 500 K/W Unit V V V mA mA mA mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type BSR17A Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * collector-emitter saturation voltage * Symbol ICBO IEBO hFE VCEsat Testconditons IE = 0 A; VCB = 30 V IE = 0 A; VCB = 30 V; Tj = 150 IC = 0 A; VEB = 6 V IC = 10 mA VCE = 1 V; IC = 10 mA; IB = 1 mA; IC = 50 mA; IB = 5 mA; base-emitter saturation voltage * Collector capacitance Emitter capacitance Transition frequency Noise figure Turn-on time Delay time Rise time Turn-off time Storage time Fall time * Pulse test: tp 300 ìs; d 0.02. VBEsat Cc Ce fT NF ton td tr toff ts tf IC = 10 mA; IB = 1 mA; IC = 50 mA; IB = 5 mA; IE = ie = 0 A; VCB = 5 V; f = 1 MHz IC = ic = 0 A; VEB = 500 mV; f = 1 MHz IC = 10 mA; VCE = 20 V; f = 100 MHz IC = 100 ìA; VCE = 5 V; RS = 1 kÙ;f = 10 Hz to 15.7 kHz ICon = 10 mA; IBon = 1 mA; IBoff = -1 mA 300 650 100 Min Transistors IC Typ Max 50 5 50 300 200 200 850 950 4 8 Unit nA ìA nA mV mV mV mV pF pF MHz 5 65 35 35 240 200 50 dB ns ns ns ns ns ns Marking Marking U92 OR 54 2 www.kexin.com.cn