BSR18A

SMD S MD Type PNP Switching Transistor BSR18A SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 Low voltage (max. 40 V). 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Low current (max. 100 mA). 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Peak collector current Peak base current Total power dissipation Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient * * Transistor mounted on an FR4 printed-circuit board. Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Rating -40 -40 -6 -100 -200 -100 250 -65 to +150 150 -65 to +150 500 Unit V V V mA mA mA mW Tamb Rth(j-a) K/W +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type BSR18A Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current Transistors IC unless otherwise specified. Symbol ICBO IEBO Testconditons IE = 0 A; VCB = -30 V IC = 0 A; VEB = -6 V VCE = -1 V;IC = -0.1 mA VCE = -1 V;IC = -1 mA 60 80 100 60 30 -200 -200 -650 -850 -950 4.5 10 250 4 65 35 35 300 225 75 mV mV mV mV pF pF MHz dB ns ns ns ns ns ns 300 Min Typ Max -50 -50 Unit nA nA DC current gain * hFE VCE = -1 V; IC = -10 mA VCE = -1 V;IC = -50 mA VCE = -1 V;IC = -100 mA Collector-emitter saturation voltage * VCEsat IC = -10 mA; IB = -1 mA IC = -50 mA; IB = -5 mA Base-emitter saturation voltage * Collector capacitance Emitter capacitance Transition frequency Noise figure Turn-on time Delay time Rise time Turn-off time Storage time Fall time * Pulse test: tp 300 ìs; d 0.02. VBEsat Cc Ce fT NF ton td tr toff ts tf IC = -10 mA; IB = -1 mA IC = -50 mA; IB = -5 mA IE = ie = 0 A; VCB = -5 V; f = 1 MHz IC = ic = 0 A; VEB = -500 mV; f = 1 MHz IC = -10 mA; VCE = -20 V; f = 100 MHz IC = -100 ìA; VCE = -5 V; RS = 1 kÙ;f = 10 Hz to 15.7 kHz ICon = -10 mA; IBon = -1 mA; IBoff = 1 mA Marking Marking T92 2 www.kexin.com.cn