BSR20

S MD Type PNP High-Voltage Transistors BSR20,BSR20A SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm +0.1 2.4-0.1 Low current (max. 300 mA) High voltage (max. 150 V). +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage BSR20 BSR20A Collector-emitter voltage BSR20 BSR20A Emitter-base voltage Collector current Peak collector current Base current Total power dissipation * Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient * VEBO IC ICM IB Ptot Tstg Tj Ramb Rth j-a VCEO Symbol VCBO Rating -130 -160 -120 -150 -5 -300 -600 -100 250 -65 to +150 150 -65 to +150 500 K/W Unit V V V V V mA mA mA mW * Transistor mounted on an FR4 printed-circuit board. +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type BSR20,BSR20A Electrical Characteristics Ta = 25 Parameter Collector cutoff current BSR20 Symbol ICBO Testconditons IE = 0; VCB = -100 V IE = 0; VCB = -100 V; Tamb = 100 Collector cutoff current BSR20A ICBO IEBO BSR20 BSR20A DC current gain BSR20 BSR20A DC current gain BSR20 BSR20A base-emitter saturation voltage Collector capacitance Transition frequency BSR20 BSR20A VCEsat Cc fT IC = -10 mA; IB = -1 mA IC = -50 mA; IB = -5 mA IE = ie = 0; VCB = -10 V; f = 1 MHz IC = -10 mA; VCE = -10 V; f = 100 MHz hFE IC = -50 mA; VCE = -5 V hFE IC = -10 mA; VCE = -5 V hFE IE = 0; VCB = -120 V IE = 0; VCB = -120 V; Tamb = 100 Emitter cutoff current DC current gain IC = 0; VEB = -4 V IC = -1 mA; VCE = -5 V 30 50 40 60 40 50 Transistors Min Typ Max -100 -100 -50 -50 -50 Unit nA ìA nA ìA nA 180 240 -200 -500 6 100 100 400 300 mV mV pF MHz MHz hFE Classification TYPE Marking BSR20 T35 BSR20A T36 2 www.kexin.com.cn