BST40

S MD Type NPN High-Voltage Transistors BST39; BST40 Transistors Features Low current (max. 50 mA) High voltage (max. 300 V). Absolute Maximum Ratings Ta = 25 Parameter collector-base voltage (open emitte) collector-emitter voltage (open-base ) BST39 BST40 BST39 BST40 VEBO IC ICM IBM 25 * Ptot Tstg Tj Tamb Rth j-a Rth j-s VCEO Symbol VCBO Rating 400 300 350 250 5 100 200 100 1.3 -65 to150 150 -65 to150 96 16 K/W K/W Unit V V V V V mA mA mA W emitter-base voltage (open collector) collector current (DC) peak collector current peak base current total power dissipation Tamb storage temperature junction temperature operating ambient temperature thermal resistance from junction to ambient * thermal resistance from junction to soldering point * Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2. www.kexin.com.cn 1 SMD Type BST39; BST40 Electrical Characteristics Ta = 25 Parameter collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage collector capacitance transition frequency Transistors unless otherwise specified. Symbol ICBO IEBO hFE VCEsat Cc fT Testconditons IE = 0; VCB = 300 V IC = 0; VEB = 5 V IC = 20 mA; VCE = 10 V IC = 50 mA; IB = 4 mA IE = ie = 0; VCB = 10 V; f = 1 MHz IC = 10 mA; VCE = 10 V; f = 100 MHz 70 Min Typ Max 20 100 40 500 2 mV pF MHz Unit nA nA Marking Type Number Marking BST39 AT1 BST40 AT2 2 www.kexin.com.cn