BSV52

SMD S MD Type NPN Switching Transistor BSV52 SOT-23 Transistors IC Unit: mm High current (max. 100 mA). +0.1 2.4-0.1 Low voltage (max. 12 V). +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features +0.1 2.9-0.1 +0.1 0.4-0.1 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient * Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Ramb Rth j-a Rating 20 12 5 100 200 100 250 -65 to +150 150 -65 to +150 500 K/W Unit V V V mA mA mA mW * Transistor mounted on an FR4 printed-circuit board. +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type BSV52 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Symbol ICBO IEBO hFE Testconditons IE = 0; VCB = 20 V IE = 0; VCB = 20 V; Tj = 125 IC = 0; VEB = 4 V VCE = 1 V, IC = 10 mA IC = 10 mA; IB = 300 ìA collector-emitter saturation voltage VCEsat IC = 10 mA; IB = 1 mA IC = 50 mA; IB = 5 mA base-emitter saturation voltage Collector capacitance Emitter capacitance Transition frequency Turn-on time Delay time Rise time Turn-off time Storage time Fall time VBEsat Cc Ce fT ton td tr toff ts tf IC = 10 mA; IB = 1 mA IC = 50 mA; IB = 5 mA IE = iE = 0; VCB = 5 V; f = 1 MHz IC = iC = 0; VEB = 1 V; f = 1 MHz 40 Transistors IC Min Typ Max 400 30 100 120 300 250 400 Unit nA ìA nA mV mV mV mV V pF pF MHz 700 850 1.4 4 4.5 500 10 4 6 20 10 10 400 IC = 10 mA; VCE = 10 V; f = 100 MHz ICon = 10 mA; IBon = 3 mA;IBoff = -1.5 mA ns ns ns ns ns ns Marking Marking B2 2 www.kexin.com.cn