C5356

S MD Type Silicon NPN Triple Diffused Type 2SC5356 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features High collectors breakdown voltage: VCEO = 800 V High DC current gain: hFE = 15 (min) (IC = 0.15 A) +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current ( DC) Collector current (Pulse) Base current Collector power dissipation Ta = 25 TC = 25 Junction temperature Storage temperature range Tj Tstg Symbol VCBO VCEO VEBO IC ICP IB PC Rating 900 800 7 3 5 1 1.5 25 150 -55 to +150 A W Unit V V V A 3 .8 0 Excellent switching times: tf = 0.5 ìs (max) (IC = 1.2 A) www.kexin.com.cn 1 SMD Type 2SC5356 Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Switching time Rise time Symbol ICBO IEBO V (BR) CBO V (BR) CEO hFE VCE (sat) VBE (sat) tr Testconditons VCB = 720 V, IE = 0 VEB = 7 V, IC = 0 IC = 1 mA, IE = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 0.15 A IC = 1.2 A, IB = 0.24 A IC = 2 A, IB = 0.24 A Transistors Min Typ Max 100 10 Unit ìA ìA V V 900 800 10 15 1.0 1.3 0.7 V V Switching time Storage time tstg 4.0 ìs Switching time Fall time tf 0.5 Marking Marking C5356 2 www.kexin.com.cn