CXT2907A

S MD Type Transistors Surface Mount PNP Switching Transistor CXT2907A Features High current (max.600mA) Low voltage (max.60V) Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Power dissipation Junction temperature Storage temperature Thermal Resistance Symbol VCBO VCEO VEBO IC PD Tj Tstg èJA Rating -60 -60 -5 -600 1.2 150 -65 to +150 104 /W Unit V V V mA W www.kexin.com.cn 1 SMD Type CXT2907A Electrical Characteristics Ta = 25 Parameter Collector-base cut-off current Emitter-base cut-off current Symbol Testconditons ICBO IEBO IE = 0; VCB = -50 V IE = 0; VCB = -50 V; Tj = 125 IC = 0; VEB = -5 V IC = -0.1 mA; VCE = -10 V IC = -1 mA; VCE = -10 V DC current gain hFE IC = -10 mA; VCE = -10 V IC = -150 mA; VCE = -10 V IC = -500 mA; VCE = -10 V Collector-emitter saturation voltage VCEsat IC = -150 mA; IB =-15mA IC = -500 mA; IB = -50 mA Base-emitter saturation voltage Turn-on time Delay time Rise time Turn-off time Storage time Fall time Transition frequency VBEsat ton td tr toff ts tf fT IC = -50 mA; VCE = -20 V; f = 100 MHz 200 VCC=-6.0V,I C=-150mA, I B1= I B2 = -15mA IC = -150 mA; IB = -15 mA IC = -500 mA; IB = -50 mA VCC=30V, VBE = -0.5V,I C=-150mA, I B1 =-15mA 75 100 100 100 50 Min Transistors Typ Max -10 -10 -50 Unit nA A nA 300 -0.4 -1.6 -1.3 -2.6 45 10 40 100 80 30 V V V V ns ns ns ns ns ns MHz 2 www.kexin.com.cn SMD Type CXT2907A Typical Characteristics VCESAT - COLLECTOR EMITTE R VOLTAGE (V) Transistors h FE - TYPICAL PULSED CURRENT GAIN Typical Pulsed Current Gain vs Collector Current 500 VCE = 5V Collector-Emitter Saturation Voltage vs Collector Current 0.5 β = 10 0.4 0.3 0.2 0.1 0 125 °C - 40 °C 400 300 200 100 0 0.1 125 °C 25 °C 25 °C - 40 °C 0.3 1 3 10 30 100 I C - COLLECTOR CURRENT (mA) 300 1 10 100 I C - COLLECTOR CURRE NT (mA) 500 V BE( ON)- BAS E EMITTER ON VOLTAGE (V) V BESAT - BASE EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current 1 - 40 °C Base Emitter ON Voltage vs Collector Current 1 0.8 0.6 0.4 0.2 0 0.1 - 40 °C 0.8 0.6 0.4 0.2 0 25 °C 25 °C 125 °C β = 10 125 °C VCE = 5V 1 10 100 I C - COLLECTOR CURRENT (mA) 500 1 10 I C - COLLECTOR CURRE NT (mA) 25 Collector-Cutoff Current vs Ambient Temperature I CBO - COLLE CTOR CURRENT (nA) 100 V CB = 35V 10 Input and Output Capacitance vs Reverse Bias Voltage 20 CAPACITANCE (pF) 16 12 C ib 1 8 4 0 0.1 C ob 0.1 0.01 25 50 75 100 T A - AMBIE NT TEMP ERATURE (° C) 125 1 10 REVERSE BIAS VOLTAGE (V) 50 www.kexin.com.cn 3