CZT127

SMD S MD Type Transistors IC Surface Mount PNP Silicon Power Darlington Transistor KZT127 (CZT127) SOT-223 Unit: mm +0.2 3.50-0.2 Features High current (max. 5A). Low voltage (max. 100V). 6.50 +0.2 -0.2 0.1max +0.05 0.90-0.05 +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 2 Collector 1 2 2.9 4.6 3 +0.1 0.70-0.1 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current power dissipation Thermal Resistance.Junction-to-Ambient Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP IB PD R JA Rating -100 -100 -5 -5 -8 -120 2 62.5 150 -65 to +150 Unit V V V A A mA W /W Tj Tstg Electrical Characteristics Ta = 25 Parameter Collector to emitter breakdown voltage Collctor cutoff current Collector cutoff current Emitter cutoff current DC current gain Collector to emitter saturation voltage Base to emitter saturation voltage Output capacitance Transition frequency Symbol VCEO ICEO ICBO IEBO hFE IC=-30mA VCE=-50V VCB = -100 V VEB = -5.0 V IC =- 500 mA; VCE =-3.0 V IC = -3A; VCE = -3.0V VCE(sat) IC = -3.0A; IB =- 12mA VBE(sat) IC = -5.0A; IB = -20mA Cob fT VCB = -10 V, IE = 0,f=1.0MHz IC= -3A; VCE =-4V; f = 1.0 MHz 4.0 1000 1000 -2.0 -4.0 300 V V pF MHz Testconditons Min -100 -500 -200 -2.0 Typ Max Unit V A A mA +0.15 1.65-0.15 www.kexin.com.cn 1